Isibonisi seLaser ye-LPT-7 Diode-Pumped Solid-State
Iinkcukacha
Semiconductor Laser | |
CW Imveliso Amandla | ≤ 500 mW |
Ipolarization | TE |
Ubude obuphakathi | 808 ± 10 nm |
Uluhlu lobushushu bokusebenza | 10 ~ 40 °C |
Ukuqhuba ngoku | 0 ~ 500 mA |
Nd: YVO4Ikristale | |
Nd Doping Concentration | 0.1 ~ 3 atm% |
Ubungakanani | 3×3×1 mm |
Ukucaba | < λ/10 @ 632.8 nm |
Ukwaleka | AR@1064 nm, R<0.1%;808="" t="">90% |
KTP Crystal | |
Uluhlu lweWavelength olugqithisayo | 0.35 ~ 4.5 µm |
I-Electro-Optic Coefficient | r33=36 pm/V |
Ubungakanani | 2×2×5 mm |
Imveliso yesipili | |
Ububanzi | Φ 6 mm |
Irediyasi yeCurvature | 50 mm |
He-Ne Ulungelelwaniso Laser | ≤ 1 mW @632.8 nm |
Ikhadi lokuJonga le-IR | Uluhlu lwempendulo yeSpectral: 0.7 ~ 1.6 µm |
IiGoggles zoKhuseleko lweLaser | OD= 4+ ye-808 nm kunye ne-1064 nm |
Imitha ye-Optical Power | 2 μW ~ 200 mW, 6 izikali |
ULUHLU LWECANDELO
Hayi. | Inkcazo | Ipharamitha | Qty |
1 | I-Optical Rail | ngesiseko kunye nesigqubuthelo sothuli, umbane we-He-Ne laser ufakwe ngaphakathi kwisiseko | 1 |
2 | He-Ne Laser Holder | nomthwali | 1 |
3 | Indawo yokulungelelanisa | f1 mm umngxuma onomthwali | 1 |
4 | Hluza | f10 mm umngxuma onomthuthi | 1 |
5 | Imveliso yesipili | BK7, f6 mm R = 50 mm nge-4-axis isibambi esilungelelanisiweyo kunye nomthwali | 1 |
6 | KTP Crystal | I-2 × 2 × 5 mm ene-2-axis isibambi esinokuhlengahlengiswa kunye nomphathi | 1 |
7 | Nd:YVO4 Ikristale | I-3 × 3 × 1 mm ene-2-axis isibambi esinokuhlengahlengiswa kunye nomthwali | 1 |
8 | I-808nm LD (i-laser diode) | ≤ I-500 mW ene-4-axis isibambi esinokuhlengahlengiswa kunye nomthwali | 1 |
9 | Umphathi weNtloko weDetector | nomthwali | 1 |
10 | Ikhadi lokuJonga le-infrared | 750 ~1600 nm | 1 |
11 | He-Ne Laser Tube | 1.5mW@632.8 nm | 1 |
12 | Imitha ye-Optical Power | 2 μW~200 mW (6 uluhlu) | 1 |
13 | Intloko yomtshini | neqweqwe kunye neposi | 1 |
14 | LD Umlawuli wangoku | 0 ~ 500 mA | 1 |
15 | Ikhodi yamandla | 3 | |
16 | Incwadi Yemiyalelo | V1.0 | 1 |
Bhala umyalezo wakho apha kwaye uwuthumele kuthi