I-LPT-7 Diode-Pumped Solid-State Laser Demonstrator
Inkcazo
I-LPT-7 yenzelwe ukufundisa okungafakwanga kumgca wokukhanya kwiikholeji nakwiiyunivesithi. Inokunceda abafundi baqonde i-diode e-solid-state (DPSS) ithiyori kunye netekhnoloji yokuphindaphindeka kwe-laser. I-laser yesimo esomeleleyo: YVO4 yikristale njengezinto zokufumana inzuzo, eyakhiwe nge-semiconductor laser pumping wavelength ye-808 nm kunye nokukhutshwa kwi-1.064 M. ukukhanya kwe-infrared ngekristal ye-KTP njenge-laser intracavity frequency ephindaphinda isizukulwana esiluhlaza, kunokwenzeka ukuba uqaphele lo mbono kunye nemilinganiselo yokulinganisa, ukusebenza kabini kokuphindaphindeka, ikona yesigaba kunye nezinye iiparameter ezisisiseko.
Ukucaciswa
Semiconductor Laser | |
Isiphumo soMbane weCW | ≤ 500 mW |
Ukwahlulahlula | TE |
Umbindi wamaza | I-808 ± 10 nm |
Uluhlu lwamaqondo obushushu oMsebenzi | 10 ~ 40 ° C |
Ukuqhuba ngoku | I-0 ~ 500 mA |
Nd: YVO4 Crystal | |
Nd Doping Ukugxila | I-0.1 ~ 3 i-atm% |
Ubukhulu | 3 × 3 × 1 mm |
Ukucaba | <λ / 10 @ 632.8 nm |
Ukwaleka | I-AR @ 1064 nm, R <0.1%; I-808 = "" t = ""> 90% |
I-KTP Crystal | |
Uluhlu lweWavelength Transmissive | 0.35 ~ 4.5 µm |
Umlinganiso we-Electro-Optic | r33= 36 pm / V |
Ubukhulu | 2 × 2 × 5 mm |
Yemveliso Mirror | |
Ububanzi | 6 mm |
Radius yokugoba | 50 mm |
Ye-Ne Ukulungelelaniswa kweLaser | Yew 1 mW @ 632.8 nm |
Ikhadi lokujonga i-IR | Uluhlu lwempendulo ye-Spectral: 0.7 ~ 1.6 µm |
Ukhuseleko lwe-Laser Goggles | OD = 4+ ye-808 nm kunye ne-1064 nm |
Imitha yamandla wokubonisa | 2 μW ~ 200 mW, 6 izikali |
ULUHLU LWAMACANDELO
Hayi. |
Inkcazo |
Ipharamitha |
Yangaphakathi |
1 |
Umzila kaloliwe | ngesiseko kunye nothuli, kunye ne-He-Ne laser yokuhambisa umbane ifakwe ngaphakathi kwesiseko |
1 |
2 |
He-Ne Laser Holder | nomphathi |
1 |
3 |
Ukulungelelaniswa kweMbobo | f1 mm umngxunya kunye nomphathi |
1 |
4 |
Hluza | f10 mm ukuvula nomphathi ophetheyo |
1 |
5 |
Yemveliso Mirror | I-BK7, f6 mm R = 50 mm ene-4-axis ibambe umnini ophetheyo kunye nomphathi |
1 |
6 |
I-KTP Crystal | 2 × 2 × 5 mm kunye 2-axis umnini adjustable kunye yenethiwekhi |
1 |
7 |
Nd: YVO4 Crystal | 3 × 3 × 1 mm kunye 2-axis umnini adjustable kunye yenethiwekhi |
1 |
8 |
I-808nm LD (i-laser diode) | ≤ I-500 mW enesiphatho se-4-axis esiguqukayo nesiphetheyo |
1 |
9 |
Umgcini weNtloko | nomphathi |
1 |
10 |
IKhadi lokujonga okungapheliyo | I-750 ~ 1600 nm |
1 |
11 |
He-Ne Laser Tube | 1.5mW@632.8 nm |
1 |
12 |
Imitha yamandla wokubonisa | 2 μW~I-200 mW (uluhlu lwe-6) |
1 |
13 |
Intloko yoMgcini | ngesembozo kunye neposi |
1 |
14 |
Umlawuli wangoku we-LD | I-0 ~ 500 mA |
1 |
15 |
Ikhodi yamandla |
3 |
|
16 |
Incwadana yemiyalelo | V1.0 |
1 |